IPD031N06L3GATMA1

Specifications

Pulsed Drain Currentmax Idm

400A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

13000pF @ 30V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

100A Tc

Turn On Delay Time

25 ns

Power Dissipation

167W

Turn Off Delay Time

64 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Fall Time Typ

13 ns

Pin Sayısı

3

Pin Sayısı

4

Ambalaj

Tape & Reel (TR)

Halogen Free

Halogen Free

Max Dual Supply Voltage

60V

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

2.2V @ 93μA

Rise Time

78ns

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On Max Id Vgs

3.1m Ω @ 100A, 10V

Jedec95 Code

TO-252AA

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Yayın Yılı

2001

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Gate Charge Qg Max Vgs

79nC @ 4.5V