IPC90N04S5L3R3ATMA1

Specifications

Fabrika Tedarik Süresi

16 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

2145pF @ 25V

Drainsource On Resistancemax

0.0047Ohm

Pulsed Drain Currentmax Idm

360A

Rds On Max Id Vgs

3.3m Ω @ 45A, 10V

Drain To Source Voltage Vdss

40V

Drain Currentmax Abs Id

90A

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

90A Tc

Yayın Yılı

2016

Parça Durumu

Active

Vgs Max

±16V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

FLAT

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

40V

Terminal Pozisyonu

DUAL

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate Charge Qg Max Vgs

40nC @ 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

3

Power Dissipation Max

62W Tc

Vgsth Max Id

2V @ 23μA

Jesd30 Code

R-PDSO-F3

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

40 mJ

Case Connection

DRAIN

Kılıf / Paket

8-PowerTDFN

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE