IPC70N04S5L4R2ATMA1

Specifications

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate Charge Qg Max Vgs

30nC @ 10V

Terminal Formu

FLAT

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±16V

Parça Durumu

Active

Terminal Pozisyonu

DUAL

Ds Breakdown Voltagemin

40V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2016

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

70A Tc

Input Capacitance Ciss Max Vds

1600pF @ 25V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

16 Weeks

Drain Currentmax Abs Id

70A

Drain To Source Voltage Vdss

40V

Pulsed Drain Currentmax Idm

280A

Drainsource On Resistancemax

0.0061Ohm

Rds On Max Id Vgs

4.2m Ω @ 35A, 10V

Case Connection

DRAIN

Kılıf / Paket

8-PowerTDFN

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101, OptiMOS™

Fet Type

N-Channel

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

32 mJ

Power Dissipation Max

50W Tc

Vgsth Max Id

2V @ 17μA

Jesd30 Code

R-PDSO-F3

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)