IPC50N04S55R8ATMA1

Specifications

Gate Charge Qg Max Vgs

18nC @ 10V

Drive Voltage Max Rds On Min Rds On

7V 10V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

40V

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

FLAT

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

50A Tc

Yayın Yılı

2016

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

5.8m Ω @ 25A, 10V

Pulsed Drain Currentmax Idm

200A

Drainsource On Resistancemax

0.0072Ohm

Drain To Source Voltage Vdss

40V

Drain Currentmax Abs Id

50A

Fabrika Tedarik Süresi

16 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1090pF @ 25V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Seri

OptiMOS™

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

8-PowerTDFN

Case Connection

DRAIN

Reference Standard

AEC-Q101

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

30 mJ

JESD-609 Kodu

e3

Jesd30 Code

R-PDSO-F3

Power Dissipation Max

42W Tc

Vgsth Max Id

3.4V @ 13μA

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

3