IPC100N04S5L1R9ATMA1

Specifications

Gate Charge Qg Max Vgs

81nC @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ds Breakdown Voltagemin

40V

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

FLAT

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±16V

Yayın Yılı

2016

Current Continuous Drain Id25

100A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

100A

Rds On Max Id Vgs

1.9m Ω @ 50A, 10V

Pulsed Drain Currentmax Idm

400A

Drainsource On Resistancemax

0.0025Ohm

Drain To Source Voltage Vdss

40V

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4310pF @ 25V

Fabrika Tedarik Süresi

16 Weeks

Fet Type

N-Channel

Seri

OptiMOS™

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Kılıf / Paket

8-PowerTDFN

Case Connection

DRAIN

Avalanche Energy Rating Eas

130 mJ

Reference Standard

AEC-Q101

Kurşunsuz Kodu

yes

Jesd30 Code

R-PDSO-F3

Vgsth Max Id

2V @ 50μA

Power Dissipation Max

100W Tc

Terminal Sayısı

3

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~175°C TJ