IPC100N04S5L1R1ATMA1

Specifications

Gate Charge Qg Max Vgs

140nC @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Pozisyonu

DUAL

Ds Breakdown Voltagemin

40V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Formu

FLAT

Vgs Max

±16V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Yayın Yılı

2016

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

100A Tc

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

100A

Drain To Source Voltage Vdss

40V

Drainsource On Resistancemax

0.0014Ohm

Pulsed Drain Currentmax Idm

400A

Rds On Max Id Vgs

1.1m Ω @ 50A, 10V

Input Capacitance Ciss Max Vds

8250pF @ 25V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

16 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101, OptiMOS™

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

8-PowerTDFN

Avalanche Energy Rating Eas

480 mJ

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Jesd30 Code

R-PDSO-F3

Power Dissipation Max

150W Tc

Vgsth Max Id

2V @ 90μA

Terminal Sayısı

3

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Number Of Elements

1