IPC100N04S51R2ATMA1

Specifications

Fabrika Tedarik Süresi

16 Weeks

Input Capacitance Ciss Max Vds

7650pF @ 25V

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

40V

Drainsource On Resistancemax

0.0014Ohm

Pulsed Drain Currentmax Idm

400A

Rds On Max Id Vgs

1.2m Ω @ 50A, 10V

Drain Currentmax Abs Id

100A

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

100A Tc

Yayın Yılı

2016

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Terminal Formu

FLAT

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

DUAL

Ds Breakdown Voltagemin

40V

Drive Voltage Max Rds On Min Rds On

7V 10V

Gate Charge Qg Max Vgs

131nC @ 10V

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Sayısı

3

Power Dissipation Max

150W Tc

Vgsth Max Id

3.4V @ 90μA

Jesd30 Code

R-PDSO-F3

Avalanche Energy Rating Eas

480 mJ

Kurşunsuz Kodu

yes

Reference Standard

AEC-Q101

Case Connection

DRAIN

Kılıf / Paket

8-PowerTDFN

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Fet Type

N-Channel