IPB80N08S207ATMA1

Specifications

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0071Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

30 ns

Fabrika Tedarik Süresi

10 Weeks

Vgs Max

±20V

Max Dual Supply Voltage

75V

Parça Durumu

Active

Transistor Element Material

SILICON

Turn On Delay Time

26 ns

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

810 mJ

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

4700pF @ 25V

Gate Charge Qg Max Vgs

180nC @ 10V

Turn Off Delay Time

61 ns

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2006

Seri

OptiMOS™

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE