IPB80N06S2L06ATMA2

Specifications

Current Continuous Drain Id25

80A Tc

Rds On Max Id Vgs

6m Ω @ 69A, 10V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

150nC @ 10V

Turn Off Delay Time

60 ns

Drain To Source Breakdown Voltage

55V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Seri

OptiMOS™

Vgsth Max Id

2V @ 180μA

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Genişlik

9.25mm

Drainsource On Resistancemax

0.0084Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

10 Weeks

Fall Time Typ

20 ns

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Rise Time

21ns

Pin Sayısı

3

Continuous Drain Current Id

80A

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

3800pF @ 25V

Power Dissipation Max

250W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2006