IPB80N06S2L05ATMA1

Specifications

Fall Time Typ

90 ns

Additional Feature

LOGIC LEVEL COMPATIBLE

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0057Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

800 mJ

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Turn On Delay Time

19 ns

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Max Dual Supply Voltage

55V

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Yayın Yılı

2006

Seri

OptiMOS™

Vgsth Max Id

2V @ 250μA

RoHS Durumu

RoHS Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

230nC @ 10V

Turn Off Delay Time

67 ns

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

5700pF @ 25V

Terminal Formu

GULL WING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Montaj

Surface Mount