IPB80N06S209ATMA2

Specifications

Gate Charge Qg Max Vgs

80nC @ 10V

Input Capacitance Ciss Max Vds

2360pF @ 25V

Terminal Formu

GULL WING

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Seri

OptiMOS™

Yayın Yılı

2006

Vgsth Max Id

4V @ 125μA

Drain To Source Voltage Vdss

55V

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

190W Tc

Pulsed Drain Currentmax Idm

320A

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

55V

Rds On Max Id Vgs

8.8m Ω @ 50A, 10V

Current Continuous Drain Id25

80A Tc

Drain Currentmax Abs Id

80A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0088Ohm

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

10 Weeks

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Case Connection

DRAIN

Avalanche Energy Rating Eas

370 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount