IPB80N06S207ATMA4

Specifications

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Vgs Max

±20V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

530 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0063Ohm

Fabrika Tedarik Süresi

10 Weeks

Rds On Max Id Vgs

6.3m Ω @ 68A, 10V

Current Continuous Drain Id25

80A Tc

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

55V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

320A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

80A

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

3400pF @ 25V

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

110nC @ 10V

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

250W Tc

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Drain To Source Voltage Vdss

55V

Vgsth Max Id

4V @ 180μA