IPB70N10SL16ATMA1

Specifications

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Fall Time Typ

95 ns

Fabrika Tedarik Süresi

10 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.025Ohm

Power Dissipation

250W

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

70 ns

Avalanche Energy Rating Eas

700 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Montaj Tipi

Surface Mount

Max Dual Supply Voltage

100V

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Seri

SIPMOS®

Yayın Yılı

2006

Vgsth Max Id

2V @ 2mA

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

250W Tc

Terminal Kaplaması

Tin (Sn)

Turn Off Delay Time

250 ns

Gate Charge Qg Max Vgs

240nC @ 10V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

4540pF @ 25V

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ