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IPB70N10S312ATMA1

Infineon Technologies

IPB70N10S312ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Jesd30 Code
R-PSSO-G2
REACH Uyumluluk Kodu
not_compliant
Power Dissipation Max
125W Tc
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Pozisyonu
SINGLE
Ambalaj
Tape & Reel (TR)
JESD-609 Kodu
e3
Number Of Elements
1
Yayın Yılı
2008
Seri
OptiMOS™
Vgsth Max Id
4V @ 83μA
Terminal Sayısı
2
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Durumu
ROHS3 Compliant
Çalışma Sıcaklığı
-55°C~175°C TJ
Turn Off Delay Time
25 ns
Gate Charge Qg Max Vgs
66nC @ 10V
Terminal Kaplaması
Tin (Sn)
Gate To Source Voltage Vgs
20V
Terminal Formu
GULL WING
Input Capacitance Ciss Max Vds
4355pF @ 25V
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Current Continuous Drain Id25
70A Tc
Rds On Max Id Vgs
11.3m Ω @ 70A, 10V
Montaj
Surface Mount
Rise Time
8ns
Continuous Drain Current Id
70A
Pin Sayısı
3
Pulsed Drain Currentmax Idm
280A
Operating Mode
ENHANCEMENT MODE
Fabrika Tedarik Süresi
14 Weeks
Configuration
SINGLE WITH BUILT-IN DIODE
Kurşunsuz
Contains Lead
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Halogen Free
Halogen Free
ECCN Kodu
EAR99
Avalanche Energy Rating Eas
410 mJ
Fet Type
N-Channel
Drive Voltage Max Rds On Min Rds On
10V
Montaj Tipi
Surface Mount

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