IPB65R660CFDAATMA1

Specifications

Current Continuous Drain Id25

6A Tc

Rds On Max Id Vgs

660m Ω @ 3.2A, 10V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

20nC @ 10V

Turn Off Delay Time

40 ns

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4.5V @ 200μA

Seri

Automotive, AEC-Q101, CoolMOS™

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-252AA

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.66Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Fall Time Typ

10 ns

Montaj

Surface Mount

Rise Time

8ns

Kurşunsuz Kodu

no

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

6A

Drain Currentmax Abs Id

6A

Çalışma Sıcaklığı

-40°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

543pF @ 100V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)