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IPB65R280C6ATMA1

Infineon Technologies

IPB65R280C6ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Yayın Yılı
2008
JESD-609 Kodu
e3
Power Dissipation Max
104W Tc
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Kaplaması
Tin (Sn)
Terminal Formu
GULL WING
Input Capacitance Ciss Max Vds
950pF @ 100V
Gate To Source Voltage Vgs
20V
Terminal Sayısı
2
RoHS Durumu
RoHS Compliant
Çalışma Sıcaklığı
-55°C~150°C TJ
Continuous Drain Current Id
13.8A
Operating Mode
ENHANCEMENT MODE
Kurşunsuz Kodu
no
Rise Time
11ns
Montaj
Surface Mount
Power Dissipation
104W
Halogen Free
Halogen Free
Case Connection
DRAIN
Turn On Delay Time
13 ns
Drive Voltage Max Rds On Min Rds On
10V
Avalanche Energy Rating Eas
290 mJ
Max Dual Supply Voltage
650V
Seri
CoolMOS™
Vgsth Max Id
3.5V @ 440μA
Jesd30 Code
R-PSSO-G2
Ambalaj
Tape & Reel (TR)
Number Of Elements
1
Terminal Pozisyonu
SINGLE
Turn Off Delay Time
105 ns
Gate Charge Qg Max Vgs
45nC @ 10V
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Pulsed Drain Currentmax Idm
39A
Pin Sayısı
4
Qualification Status
Not Qualified
Transistor Application
SWITCHING
Current Continuous Drain Id25
13.8A Tc
Rds On Max Id Vgs
280m Ω @ 4.4A, 10V
Fall Time Typ
12 ns

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