IPB65R225C7ATMA1

Specifications

Drainsource On Resistancemax

0.225Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Jedec95 Code

TO-252

Fabrika Tedarik Süresi

20 Weeks

Fall Time Typ

10 ns

Parça Durumu

Discontinued

Transistor Element Material

SILICON

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

48 ns

Gate Charge Qg Max Vgs

20nC @ 10V

Number Of Channels

1

Drain To Source Breakdown Voltage

650V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Seri

CoolMOS™ C7

Vgsth Max Id

4V @ 240μA

Rds On Max Id Vgs

225m Ω @ 4.8A, 10V

Current Continuous Drain Id25

11A Tc

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Halogen Free

Halogen Free

Power Dissipation

63W

Max Dual Supply Voltage

650V

Avalanche Energy Rating Eas

48 mJ

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Element Configuration

Single

Turn On Delay Time

9 ns

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING