IPB65R150CFDATMA1

Specifications

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

5.6 ns

Fabrika Tedarik Süresi

18 Weeks

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Turn Off Delay Time

52.8 ns

Gate Charge Qg Max Vgs

86nC @ 10V

Number Of Channels

1

Drain To Source Breakdown Voltage

650V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Seri

CoolMOS™

Vgsth Max Id

4.5V @ 900μA

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Ambalaj

Cut Tape (CT)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Pulsed Drain Currentmax Idm

72A

Pin Sayısı

4

Rds On Max Id Vgs

150m Ω @ 9.3A, 10V

Current Continuous Drain Id25

22.4A Tc

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Halogen Free

Halogen Free

Power Dissipation

195.3W

Max Dual Supply Voltage

650V

Yükseklik

4.7mm

Case Connection

DRAIN

Turn On Delay Time

12.4 ns

Drive Voltage Max Rds On Min Rds On

10V

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

2340pF @ 100V

RoHS Durumu

ROHS3 Compliant