IPB65R099C6ATMA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.099Ohm

Kurşunsuz

Contains Lead

Halogen Free

Halogen Free

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

6 ns

Fabrika Tedarik Süresi

12 Weeks

Max Dual Supply Voltage

650V

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Discontinued

Case Connection

DRAIN

Turn On Delay Time

10.6 ns

Avalanche Energy Rating Eas

845 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

127nC @ 10V

Turn Off Delay Time

77 ns

Input Capacitance Ciss Max Vds

2780pF @ 100V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Seri

CoolMOS™

Yayın Yılı

2008

Vgsth Max Id

3.5V @ 1.2mA

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Ambalaj

Cut Tape (CT)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

278W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

115A

Continuous Drain Current Id

38A

Pin Sayısı

3

Pin Sayısı

4