IPB60R360P7ATMA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ds Breakdown Voltagemin

600V

Current Continuous Drain Id25

9A Tc

Rds On Max Id Vgs

360m Ω @ 2.7A, 10V

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

26A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Power Dissipation Max

41W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Yayın Yılı

2014

Seri

CoolMOS™ P7

Vgsth Max Id

4V @ 140μA

Drain To Source Voltage Vdss

600V

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

13nC @ 10V

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

555pF @ 400V

Avalanche Energy Rating Eas

27 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Vgs Max

±20V

Fabrika Tedarik Süresi

18 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.36Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99