IPB60R280P7ATMA1

Specifications

Avalanche Energy Rating Eas

38 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Vgs Max

±20V

Yüzey Montaj

YES

Parça Durumu

Active

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

18 Weeks

Drainsource On Resistancemax

0.28Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

36A

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

600V

Rds On Max Id Vgs

280m Ω @ 3.8A, 10V

Current Continuous Drain Id25

12A Tc

Transistor Application

SWITCHING

Yayın Yılı

2014

Seri

CoolMOS™ P7

Drain To Source Voltage Vdss

600V

Vgsth Max Id

4V @ 190μA

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

53W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

18nC @ 10V

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

761pF @ 400V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ