IPB60R160P6ATMA1

Specifications

Fabrika Tedarik Süresi

12 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.16Ohm

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

497 mJ

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Max Dual Supply Voltage

600V

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Power Dissipation Max

176W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Yayın Yılı

2008

Seri

CoolMOS™ P6

Vgsth Max Id

4.5V @ 750μA

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

44nC @ 10V

Terminal Kaplaması

Tin (Sn)

Input Capacitance Ciss Max Vds

2080pF @ 100V

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Rds On Max Id Vgs

160m Ω @ 9A, 10V

Current Continuous Drain Id25

23.8A Tc

Transistor Application

SWITCHING

Continuous Drain Current Id

23.8A