IPB60R160C6ATMA1

Specifications

Case Connection

DRAIN

Turn On Delay Time

13 ns

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

497 mJ

Montaj Tipi

Surface Mount

Max Dual Supply Voltage

600V

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Not For New Designs

Fall Time Typ

8 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kurşunsuz

Contains Lead

Power Dissipation

176W

Halogen Free

Halogen Free

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

70A

Pin Sayısı

2

Continuous Drain Current Id

23.8A

Pin Sayısı

4

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Kurşunsuz Kodu

no

Transistor Application

SWITCHING

Current Continuous Drain Id25

23.8A Tc

Montaj

Surface Mount

Rds On Max Id Vgs

160m Ω @ 11.3A, 10V

Seri

CoolMOS™

Yayın Yılı

2008

Vgsth Max Id

3.5V @ 750μA

REACH Uyumluluk Kodu

not_compliant

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

176W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Kaplaması

Tin (Sn)

Gate Charge Qg Max Vgs

75nC @ 10V