IPB60R120P7ATMA1

Specifications

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

82 mJ

Turn On Delay Time

21 ns

Yükseklik

4.7mm

Transistor Element Material

SILICON

Parça Durumu

Active

Yüzey Montaj

YES

Vgs Max

±20V

Fabrika Tedarik Süresi

18 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipation

95W

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Current Continuous Drain Id25

26A Tc

Rds On Max Id Vgs

120m Ω @ 8.2A, 10V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

78A

Continuous Drain Current Id

26A

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

95W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

4V @ 410μA

Drain To Source Voltage Vdss

650V

Seri

CoolMOS™ P7

Yayın Yılı

2014

Çalışma Sıcaklığı

-55°C~150°C TJ

Max Junction Temperature Tj

150°C

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Drain To Source Breakdown Voltage

600V