IPB60R120C7ATMA1

Specifications

Rds On Max Id Vgs

120m Ω @ 7.8A, 10V

Current Continuous Drain Id25

19A Tc

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

66A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

19A

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Terminal Sayısı

2

Input Capacitance Ciss Max Vds

1500pF @ 400V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

34nC @ 10V

Terminal Kaplaması

Tin (Sn)

Power Dissipation Max

92W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4V @ 390μA

Drain To Source Voltage Vdss

650V

Yayın Yılı

2014

Seri

CoolMOS™ C7

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

78 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Jedec95 Code

TO-263AB