IPB60R099P7ATMA1

Specifications

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

105 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.099Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

18 Weeks

Rds On Max Id Vgs

99m Ω @ 10.5A, 10V

Current Continuous Drain Id25

31A Tc

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

600V

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

100A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance Ciss Max Vds

1952pF @ 400V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

45nC @ 10V

Terminal Kaplaması

Tin (Sn)

Power Dissipation Max

117W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4V @ 530μA

Drain To Source Voltage Vdss

650V

Yayın Yılı

2014