IPB60R060C7ATMA1

Specifications

Drain Currentmax Abs Id

35A

Ds Breakdown Voltagemin

600V

Rds On Max Id Vgs

60m Ω @ 15.9A, 10V

Current Continuous Drain Id25

35A Tc

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

135A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

162W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Yayın Yılı

2014

Seri

CoolMOS™ C7

Vgsth Max Id

4V @ 800μA

Drain To Source Voltage Vdss

650V

Terminal Sayısı

2

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate Charge Qg Max Vgs

68nC @ 10V

Input Capacitance Ciss Max Vds

2850pF @ 400V

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

159 mJ

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Vgs Max

±20V

Fabrika Tedarik Süresi

18 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.06Ohm

Jedec95 Code

TO-263AB