Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Yüzey Montaj
- YES
- Avalanche Energy Rating Eas
- 330 mJ
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Drainsource On Resistancemax
- 0.0206Ohm
- Jedec95 Code
- TO-263AB
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 14 Weeks
- Kurşunsuz Kodu
- yes
- Ds Breakdown Voltagemin
- 120V
- Reference Standard
- AEC-Q101
- Pulsed Drain Currentmax Idm
- 200A
- Polaritychannel Type
- N-CHANNEL
- Operating Mode
- ENHANCEMENT MODE
- Drain Currentmax Abs Id
- 50A
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Operating Temperature Min
- -55°C
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 2
- Terminal Kaplaması
- Tin (Sn)
- Terminal Formu
- GULL WING
- REACH Uyumluluk Kodu
- not_compliant
- Jesd30 Code
- R-PSSO-G2
- Number Of Elements
- 1
- JESD-609 Kodu
- e3
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2016
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