IPB50N10S3L16ATMA1

Specifications

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

50A

Pin Sayısı

3

Pulsed Drain Currentmax Idm

200A

Current Continuous Drain Id25

50A Tc

Montaj

Surface Mount

Rise Time

5ns

Rds On Max Id Vgs

15.4m Ω @ 50A, 10V

Reference Standard

AEC-Q101

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

4180pF @ 25V

Terminal Formu

GULL WING

Turn Off Delay Time

28 ns

Gate Charge Qg Max Vgs

64nC @ 10V

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgsth Max Id

2.4V @ 60μA

Yayın Yılı

2008

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

100W Tc

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgs Max

±20V

Max Dual Supply Voltage

100V

Parça Durumu

Active

Transistor Element Material

SILICON

Turn On Delay Time

10 ns

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V