IPB180N10S402ATMA1

Specifications

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab)

Terminal Sayısı

6

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

14600pF @ 25V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

200nC @ 10V

Turn Off Delay Time

30 ns

Terminal Kaplaması

Tin (Sn)

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Jesd30 Code

R-PSSO-G6

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

3.5V @ 275μA

Yayın Yılı

2013

Seri

Automotive, AEC-Q101, OptiMOS™

Montaj

Surface Mount

Rise Time

9ns

Rds On Max Id Vgs

2.5m Ω @ 100A, 10V

Current Continuous Drain Id25

180A Tc

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

180A

Pulsed Drain Currentmax Idm

720A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Halogen Free

Halogen Free

Power Dissipation

300W

Drainsource On Resistancemax

0.0025Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

14 Weeks

Fall Time Typ

40 ns

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Max Dual Supply Voltage

100V