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IPB180N04S401ATMA1

Infineon Technologies

IPB180N04S401ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Halogen Free
Halogen Free
Additional Feature
ULTRA-LOW RESISTANCE
Max Dual Supply Voltage
40V
Avalanche Energy Rating Eas
550 mJ
Drive Voltage Max Rds On Min Rds On
10V
Turn On Delay Time
35 ns
Case Connection
DRAIN
Çalışma Sıcaklığı
-55°C~175°C TJ
Terminal Sayısı
6
RoHS Durumu
ROHS3 Compliant
Terminal Formu
GULL WING
Input Capacitance Ciss Max Vds
14000pF @ 25V
Gate To Source Voltage Vgs
20V
Terminal Kaplaması
Tin (Sn)
JESD-609 Kodu
e3
Power Dissipation Max
188W Tc
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2010
Reference Standard
AEC-Q101
Rise Time
24ns
Montaj
Surface Mount
Operating Mode
ENHANCEMENT MODE
Pin Sayısı
7
Continuous Drain Current Id
180A
Configuration
SINGLE WITH BUILT-IN DIODE
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Drainsource On Resistancemax
0.0013Ohm
Kurşunsuz
Contains Lead
Fabrika Tedarik Süresi
16 Weeks
Fall Time Typ
41 ns
Transistor Element Material
SILICON
Parça Durumu
Active
Vgs Max
±20V
Montaj Tipi
Surface Mount
Fet Type
N-Channel
Kılıf / Paket
TO-263-7, D2Pak (6 Leads + Tab)
Turn Off Delay Time
38 ns
Gate Charge Qg Max Vgs
176nC @ 10V
Ambalaj
Tape & Reel (TR)

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