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IPB160N04S4LH1ATMA1

Infineon Technologies

IPB160N04S4LH1ATMA1

Single MOSFETs Transistors

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Specifications

Montaj Tipi
Surface Mount
Avalanche Energy Rating Eas
400 mJ
Fet Type
N-Channel
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Turn On Delay Time
16 ns
Case Connection
DRAIN
Transistor Element Material
SILICON
Parça Durumu
Active
Vgs Max
+20V, -16V
Max Dual Supply Voltage
40V
Fabrika Tedarik Süresi
14 Weeks
Fall Time Typ
65 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Halogen Free
Halogen Free
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz
Contains Lead
Drainsource On Resistancemax
0.0015Ohm
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Rise Time
20ns
Montaj
Surface Mount
Rds On Max Id Vgs
1.5m Ω @ 100A, 10V
Current Continuous Drain Id25
160A Tc
Kurşunsuz Kodu
yes
Operating Mode
ENHANCEMENT MODE
Pulsed Drain Currentmax Idm
640A
Pin Sayısı
7
Continuous Drain Current Id
160A
Terminal Pozisyonu
SINGLE
Ambalaj
Tape & Reel (TR)
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
167W Tc
REACH Uyumluluk Kodu
not_compliant
Jesd30 Code
R-PSSO-G6
Vgsth Max Id
2.2V @ 110μA
Seri
Automotive, AEC-Q101, OptiMOS™
Yayın Yılı
2013
Çalışma Sıcaklığı
-55°C~175°C TJ
Terminal Sayısı
6

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