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IPB160N04S4H1ATMA1

Infineon Technologies

IPB160N04S4H1ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Technical team support

Specifications

Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Pulsed Drain Currentmax Idm
640A
Pin Sayısı
7
Continuous Drain Current Id
160A
Operating Mode
ENHANCEMENT MODE
Reference Standard
AEC-Q101
Current Continuous Drain Id25
160A Tc
Rds On Max Id Vgs
1.6m Ω @ 100A, 10V
Montaj
Surface Mount
Rise Time
22ns
Seri
OptiMOS™
Yayın Yılı
2012
Vgsth Max Id
4V @ 110μA
Jesd30 Code
R-PSSO-G6
Terminal Pozisyonu
SINGLE
Ambalaj
Cut Tape (CT)
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
167W Tc
Turn Off Delay Time
29 ns
Gate Charge Qg Max Vgs
137nC @ 10V
Input Capacitance Ciss Max Vds
10920pF @ 25V
Terminal Formu
GULL WING
Gate To Source Voltage Vgs
20V
RoHS Durumu
ROHS3 Compliant
Terminal Sayısı
6
Kılıf / Paket
TO-263-7, D2Pak (6 Leads + Tab)
Çalışma Sıcaklığı
-55°C~175°C TJ
Case Connection
DRAIN
Turn On Delay Time
28 ns
Avalanche Energy Rating Eas
400 mJ
Fet Type
N-Channel
Drive Voltage Max Rds On Min Rds On
10V
Montaj Tipi
Surface Mount
Max Dual Supply Voltage
40V
Vgs Max
±20V
Transistor Element Material
SILICON
Parça Durumu
Active
Additional Feature
ULTRA LOW RESISTANCE
Fall Time Typ
33 ns

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