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IPB120N10S405ATMA1

Infineon Technologies

IPB120N10S405ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Verified sourcing

RoHS

Compliant

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Specifications

Pulsed Drain Currentmax Idm
480A
Continuous Drain Current Id
120A
Pin Sayısı
3
Operating Mode
ENHANCEMENT MODE
Kurşunsuz Kodu
yes
Montaj
Surface Mount
Rise Time
10ns
Rds On Max Id Vgs
5m Ω @ 100A, 10V
Current Continuous Drain Id25
120A Tc
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Turn Off Delay Time
30 ns
Gate Charge Qg Max Vgs
91nC @ 10V
Terminal Formu
GULL WING
Input Capacitance Ciss Max Vds
6540pF @ 25V
Gate To Source Voltage Vgs
20V
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Sayısı
2
RoHS Durumu
ROHS3 Compliant
Çalışma Sıcaklığı
-55°C~175°C TJ
Seri
Automotive, AEC-Q101, OptiMOS™
Yayın Yılı
2013
Vgsth Max Id
3.5V @ 120μA
Jesd30 Code
R-PSSO-G2
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
SINGLE
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
190W Tc
Max Dual Supply Voltage
100V
Vgs Max
±20V
Transistor Element Material
SILICON
Parça Durumu
Active
Case Connection
DRAIN
Turn On Delay Time
15 ns
Fet Type
N-Channel
Drive Voltage Max Rds On Min Rds On
10V
Montaj Tipi
Surface Mount
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Kurşunsuz
Contains Lead
Drainsource On Resistancemax
0.005Ohm

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