IPB120N06S4H1ATMA2

Specifications

Rds On Max Id Vgs

2.4m Ω @ 100A, 10V

Current Continuous Drain Id25

120A Tc

Pulsed Drain Currentmax Idm

480A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain To Source Breakdown Voltage

60V

Turn Off Delay Time

60 ns

Gate Charge Qg Max Vgs

270nC @ 10V

Number Of Channels

1

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4V @ 200μA

Seri

Automotive, AEC-Q101, OptiMOS™

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Fabrika Tedarik Süresi

16 Weeks

Fall Time Typ

15 ns

Rise Time

5ns

Montaj

Surface Mount

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

120A

Pin Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

21900pF @ 25V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)