IPB100N12S305ATMA1

Specifications

Avalanche Energy Rating Eas

1445 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Yüzey Montaj

YES

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Fabrika Tedarik Süresi

14 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0048Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Jedec95 Code

TO-263AB

Drain Currentmax Abs Id

100A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ds Breakdown Voltagemin

120V

Rds On Max Id Vgs

5.1m Ω @ 100A, 10V

Current Continuous Drain Id25

100A Tc

Reference Standard

AEC-Q101

Pulsed Drain Currentmax Idm

400A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

300W Tc

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Number Of Elements

1

Yayın Yılı

2017

Seri

OptiMOS™

Vgsth Max Id

4V @ 240μA

Drain To Source Voltage Vdss

120V

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

185nC @ 10V