IPB100N10S305ATMA1

Specifications

Fabrika Tedarik Süresi

14 Weeks

Fall Time Typ

20 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0048Ohm

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Halogen Free

Halogen Free

ECCN Kodu

EAR99

Power Dissipation

300W

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Turn On Delay Time

34 ns

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Max Dual Supply Voltage

100V

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Yayın Yılı

2008

Seri

OptiMOS™

Vgsth Max Id

4V @ 240μA

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate Charge Qg Max Vgs

176nC @ 10V

Turn Off Delay Time

60 ns

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

11570pF @ 25V

Terminal Formu

GULL WING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED