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IPB100N04S2L03ATMA2

Infineon Technologies

IPB100N04S2L03ATMA2

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Pulsed Drain Currentmax Idm
400A
Continuous Drain Current Id
100A
Pin Sayısı
3
Operating Mode
ENHANCEMENT MODE
Kurşunsuz Kodu
yes
Current Continuous Drain Id25
100A Tc
Rds On Max Id Vgs
3m Ω @ 80A, 10V
Rise Time
51ns
Montaj
Surface Mount
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Gate Charge Qg Max Vgs
230nC @ 10V
Turn Off Delay Time
77 ns
Input Capacitance Ciss Max Vds
6000pF @ 25V
Terminal Formu
GULL WING
Drain To Source Breakdown Voltage
40V
Gate To Source Voltage Vgs
20V
RoHS Durumu
ROHS3 Compliant
Kılıf / Paket
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Sayısı
2
Çalışma Sıcaklığı
-55°C~175°C TJ
Seri
OptiMOS™
Yayın Yılı
2006
Vgsth Max Id
2V @ 250μA
Jesd30 Code
R-PSSO-G2
Ambalaj
Tape & Reel (TR)
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation Max
300W Tc
Max Dual Supply Voltage
40V
Vgs Max
±20V
Transistor Element Material
SILICON
Parça Durumu
Not For New Designs
Case Connection
DRAIN
Turn On Delay Time
19 ns
Element Configuration
Single
Avalanche Energy Rating Eas
810 mJ
Fet Type
N-Channel
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Montaj Tipi
Surface Mount
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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