IPB100N04S204ATMA4

Specifications

Vgs Max

±20V

Max Dual Supply Voltage

40V

Parça Durumu

Active

Transistor Element Material

SILICON

Element Configuration

Single

Turn On Delay Time

27 ns

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

810 mJ

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Halogen Free

Halogen Free

Power Dissipation

300W

Kurşunsuz

Contains Lead

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

33 ns

Additional Feature

AVALANCHE RATED

Fabrika Tedarik Süresi

10 Weeks

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

100A

Pulsed Drain Currentmax Idm

400A

Current Continuous Drain Id25

100A Tc

Rds On Max Id Vgs

3.3m Ω @ 80A, 10V

Rise Time

46ns

Montaj

Surface Mount

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

5300pF @ 25V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

40V

Turn Off Delay Time

56 ns

Gate Charge Qg Max Vgs

172nC @ 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Yayın Yılı

2006