IPB073N15N5ATMA1

Specifications

Vgs Max

±20V

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Drive Voltage Max Rds On Min Rds On

8V 10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

130 mJ

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0073Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

13 Weeks

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

456A

Transistor Application

SWITCHING

Rds On Max Id Vgs

7.3m Ω @ 57A, 10V

Current Continuous Drain Id25

114A Tc

Kurşunsuz Kodu

yes

Ds Breakdown Voltagemin

150V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

114A

Input Capacitance Ciss Max Vds

4700pF @ 75V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

61nC @ 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Vgsth Max Id

4.6V @ 160μA

Drain To Source Voltage Vdss

150V

Seri

OptiMOS™-5

Yayın Yılı

2004

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

214W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

REACH Uyumluluk Kodu

not_compliant