IPB072N15N3GATMA1

Specifications

Rds On Max Id Vgs

7.2m Ω @ 100A, 10V

Current Continuous Drain Id25

100A Tc

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Pin Sayısı

4

Pulsed Drain Currentmax Idm

400A

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

46 ns

Gate Charge Qg Max Vgs

93nC @ 10V

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

4V @ 270μA

Seri

OptiMOS™

Parça Durumu

Active

Transistor Element Material

SILICON

Vgs Max

±20V

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

ECCN Kodu

EAR99

Kurşunsuz

Contains Lead

Drainsource On Resistancemax

0.0072Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

14 ns

Montaj

Surface Mount

Rise Time

35ns

Kurşunsuz Kodu

no

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

100A

Pin Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

5470pF @ 75V