IPB065N03LGATMA1

Specifications

Pin Sayısı

4

Transistor Application

SWITCHING

Rds On Max Id Vgs

6.5m Ω @ 30A, 10V

Current Continuous Drain Id25

50A Tc

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

23nC @ 10V

Turn Off Delay Time

21 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgsth Max Id

2.2V @ 250μA

Seri

OptiMOS™

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Montaj Tipi

Surface Mount

Fet Type

N-Channel

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0095Ohm

Kurşunsuz

Contains Lead

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

3.4 ns

Fabrika Tedarik Süresi

52 Weeks

Operating Mode

ENHANCEMENT MODE

Pin Sayısı

3

Continuous Drain Current Id

50A

Montaj

Surface Mount

Rise Time

4.2ns

Kurşunsuz Kodu

no

Input Capacitance Ciss Max Vds

2400pF @ 15V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2