IPB057N06NATMA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pin Sayısı

4

Transistor Application

SWITCHING

Rds On Max Id Vgs

5.7m Ω @ 45A, 10V

Current Continuous Drain Id25

17A Ta 45A Tc

Vgsth Max Id

2.8V @ 36μA

Seri

OptiMOS™

Ambalaj

Cut Tape (CT)

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

Drain To Source Breakdown Voltage

60V

Turn Off Delay Time

20 ns

Gate Charge Qg Max Vgs

27nC @ 10V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Fall Time Typ

7 ns

Fabrika Tedarik Süresi

13 Weeks

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0057Ohm

Kurşunsuz

Contains Lead

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

45A

Pin Sayısı

3

Montaj

Surface Mount

Rise Time

12ns

Kurşunsuz Kodu

no

Yayın Yılı

2012

JESD-609 Kodu

e3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

3W Ta 83W Tc

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

2000pF @ 30V

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ