IPB049N08N5ATMA1

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Montaj

Surface Mount

Rise Time

7ns

Rds On Max Id Vgs

4.9m Ω @ 80A, 10V

Current Continuous Drain Id25

80A Tc

Pulsed Drain Currentmax Idm

320A

Continuous Drain Current Id

80A

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

125W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

3.949996g

Seri

OptiMOS™

Yayın Yılı

2013

Vgsth Max Id

3.8V @ 66μA

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Channels

1

Gate Charge Qg Max Vgs

53nC @ 10V

Turn Off Delay Time

27 ns

Input Capacitance Ciss Max Vds

3770pF @ 40V

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

84 mJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Turn On Delay Time

17 ns

Element Configuration

Single

Transistor Element Material

SILICON

Parça Durumu

Active

Max Dual Supply Voltage

80V