IPB048N15N5ATMA1

Specifications

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

7800pF @ 75V

Gate Charge Qg Max Vgs

100nC @ 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4.6V @ 264μA

Drain To Source Voltage Vdss

150V

Yayın Yılı

2013

Seri

OptiMOS™

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

SINGLE

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

480A

Current Continuous Drain Id25

120A Tc

Rds On Max Id Vgs

4.8m Ω @ 60A, 10V

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

150V

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain Currentmax Abs Id

120A

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0048Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

13 Weeks

Vgs Max

±20V

Parça Durumu

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

8V 10V