IPB044N15N5ATMA1

Specifications

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

8000pF @ 75V

Drain To Source Breakdown Voltage

150V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

100nC @ 10V

Turn Off Delay Time

24 ns

Number Of Channels

1

Max Junction Temperature Tj

175°C

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

6

Kılıf / Paket

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4.6V @ 264μA

Yayın Yılı

2013

Seri

OptiMOS™

Power Dissipation Max

300W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G6

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

174A

Pulsed Drain Currentmax Idm

696A

Current Continuous Drain Id25

174A Tc

Rds On Max Id Vgs

4.4m Ω @ 87A, 10V

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Power Dissipation

300W

Drainsource On Resistancemax

0.0044Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

13 Weeks

Vgs Max

±20V

Yüzey Montaj

YES

Parça Durumu

Active

Transistor Element Material

SILICON