IPB042N10N3GATMA1

Specifications

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.0042Ohm

Kurşunsuz

Contains Lead

Configuration

SINGLE WITH BUILT-IN DIODE

Fall Time Typ

14 ns

Fabrika Tedarik Süresi

13 Weeks

Vgs Max

±20V

Parça Durumu

Active

Transistor Element Material

SILICON

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Drain To Source Breakdown Voltage

100V

Gate Charge Qg Max Vgs

117nC @ 10V

Turn Off Delay Time

48 ns

Number Of Channels

1

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgsth Max Id

3.5V @ 150μA

Seri

OptiMOS™

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

Pin Sayısı

4

Pulsed Drain Currentmax Idm

400A

Rds On Max Id Vgs

4.2m Ω @ 50A, 10V

Current Continuous Drain Id25

100A Tc

Transistor Application

SWITCHING

Radyasyon Dayanımı

No

Halogen Free

Halogen Free

Power Dissipation

214W

Max Dual Supply Voltage

100V

Turn On Delay Time

27 ns

Yükseklik

4.7mm

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

6V 10V

Gate To Source Voltage Vgs

20V

Input Capacitance Ciss Max Vds

8410pF @ 50V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Max Junction Temperature Tj

175°C