IPB039N10N3GATMA1

Specifications

Fall Time Typ

14 ns

Fabrika Tedarik Süresi

13 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0039Ohm

Kurşunsuz

Contains Lead

Jedec95 Code

TO-263AA

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Vgs Max

±20V

Transistor Element Material

SILICON

Parça Durumu

Active

Seri

OptiMOS™

Vgsth Max Id

3.5V @ 160μA

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G6

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Gate Charge Qg Max Vgs

117nC @ 10V

Turn Off Delay Time

48 ns

Kılıf / Paket

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

640A

Pin Sayısı

4

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Current Continuous Drain Id25

160A Tc

Rds On Max Id Vgs

3.9m Ω @ 100A, 10V

Power Dissipation

214W

Halogen Free

Halogen Free

Case Connection

DRAIN

Turn On Delay Time

27 ns

Avalanche Energy Rating Eas

340 mJ

Drive Voltage Max Rds On Min Rds On

6V 10V

Max Dual Supply Voltage

100V

Yayın Yılı

2008

JESD-609 Kodu

e3

Power Dissipation Max

214W Tc