IPB038N12N3GATMA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Fall Time Typ

21 ns

Transistor Element Material

SILICON

Parça Durumu

Active

Vgs Max

±20V

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn Off Delay Time

70 ns

Gate Charge Qg Max Vgs

211nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Jesd30 Code

R-PSSO-G2

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Seri

OptiMOS™

Vgsth Max Id

4V @ 270μA

Qualification Status

Not Qualified

Transistor Application

SWITCHING

Rds On Max Id Vgs

3.8m Ω @ 100A, 10V

Current Continuous Drain Id25

120A Tc

Pulsed Drain Currentmax Idm

480A

Pin Sayısı

4

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

300W

Avalanche Energy Rating Eas

900 mJ

Drive Voltage Max Rds On Min Rds On

10V

Case Connection

DRAIN

Turn On Delay Time

35 ns

Terminal Sayısı

2

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

13800pF @ 60V

Gate To Source Voltage Vgs

20V

JESD-609 Kodu

e3