IPB033N10N5LFATMA1

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

0.0033Ohm

Power Dissipation

179W

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Transistor Element Material

SILICON

Yüzey Montaj

YES

Parça Durumu

Active

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Avalanche Energy Rating Eas

273 mJ

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Yükseklik

4.5mm

Turn On Delay Time

8 ns

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Channels

1

Gate Charge Qg Max Vgs

102nC @ 10V

Turn Off Delay Time

64 ns

Input Capacitance Ciss Max Vds

460pF @ 50V

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

100V

Gate To Source Voltage Vgs

20V

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

SINGLE

Power Dissipation Max

179W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™-5

Yayın Yılı

2013

Threshold Voltage

3.3V

Vgsth Max Id

4.1V @ 150μA

Rds On Max Id Vgs

3.3m Ω @ 100A, 10V

Current Continuous Drain Id25

120A Tc